Title :
A 366mW direct digital synthesizer at 15GHz clock frequency in SiGe Bipolar technology
Author :
Laemmle, Benjamin ; Wagner, Christoph ; Knapp, Herbert ; Maurer, Linus ; Weigel, Robert
Author_Institution :
Inst. of Electron. Eng., Univ. Erlangen-Nuremberg, Erlangen, Germany
Abstract :
A direct digital synthesizer (DDS) with 6-bit amplitude and 8-bit phase resolution is presented. The phase-to-amplitude mapping circuit is implemented as a differential pair in saturation. The suitability of this circuit for broadband application and high temperature range is shown. The use of a modern SiGe bipolar technology enables both a low power consumption of 366 mW and a high clock frequency of 15 GHz. A spurious free dynamic range (SFDR) between 42 and 20 dBc is achieved. The chip is fabricated in a 0.35 mum 200-GHz fT SiGe bipolar technology and occupies only 1024 times 1128 mum2.
Keywords :
Ge-Si alloys; bipolar integrated circuits; direct digital synthesis; microwave bipolar transistors; 6-bit amplitude; 8-bit phase resolution; SiGe; bipolar technology; broadband application; clock frequency; direct digital synthesizer; frequency 15 GHz; frequency 200 GHz; phase-to-amplitude mapping circuit; power 366 mW; size 0.35 mum; spurious free dynamic range; Adders; Clocks; Energy consumption; Frequency conversion; Frequency synthesizers; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Radiofrequency integrated circuits; Silicon germanium; SiGe; direct digital synthesizer; frequency synthesizer; heterojunction bipolar transistor;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-3377-3
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2009.5135570
