Title :
Sb-based coupled quantum wells for efficient broadband intersubband all-optical switches
Author :
Yoshida, Hiroyuki ; Mozume, Teruo ; Simoyama, Takasi ; Ishikawa, Hiroshi
Abstract :
We optimized a cTQW structure for both switching energy and response time using InGaAs/AlAs/AlAsSb material system. In such a structure, we expect switching energy to be in the range of a few 100s to a few 10s of fJ (few 10s of nW) depending on the growth optimization. We estimated the LO-phonon assisted relaxation time to be about 500 fsec (switching speeds exceeding 1THz) with multi-wavelength applicability. This low energy and high speed QW structure is ideal for realizing highly efficient gate switch for futuristic all-optical communication networks with bit rates exceeding few 100 Gb/s.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical switches; gallium arsenide; indium compounds; optical communication equipment; phonons; semiconductor quantum wells; 100 Gbit/s; 100 to 10 s; 500 fs; InGaAs-AlAs-AlAsSb; InGaAs/AlAs/AlAsSb material system; LO-phonon assisted relaxation time; Sb-based coupled quantum wells; all-optical communication networks; bit rates; broadband intersubband all-optical switches; cTQW structure; growth optimization; high speed QW structure; low energy; multi-wavelength applicability; response time; switching energy; switching speeds; Absorption; Communication switching; High speed optical techniques; Optical control; Optical devices; Optical fiber networks; Optical mixing; Optical saturation; Switches; Ultrafast optics;
Conference_Titel :
Optical Fiber Communication Conference and Exhibit, 2002. OFC 2002
Print_ISBN :
1-55752-701-6
DOI :
10.1109/OFC.2002.1036179
