Title :
A single-chip 0.125–26GHz signal source in 0.18um SiGe BiCMOS
Author :
Yu, Shih-An ; Baeyens, Yves ; Weiner, Joe ; Koc, Ut-Va ; Rambaud, Marta ; Liao, Fang-Ren ; Chen, Young-Kai ; Kinget, Peter
Author_Institution :
Columbia Univ., New York, NY, USA
Abstract :
We present a 4.4 mm2 single-chip synthesized signal source with 0.125 to 26-GHz output frequency realized on a 0.18um SiGe BiCMOS technology. A core fractional-N synthesizer uses four VCO´s and has a 4 to 8-GHz synthesizable range. Additional frequency division and multiplication are used to generate frequencies below 4 GHz and above 8 GHz, respectively. The noise performance achieves -116.7 dBc/Hz at 1-MHz offset for 6-GHz output frequency and -80.6dBc/Hz in-band noise.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; frequency synthesizers; semiconductor materials; voltage-controlled oscillators; BiCMOS technology; SiGe; VCO; core fractional-N synthesizer; frequency 0.125 GHz to 26 GHz; single-chip synthesized signal source; size 0.18 mum; BiCMOS integrated circuits; Circuit optimization; Frequency conversion; Germanium silicon alloys; Phase locked loops; Signal synthesis; Silicon germanium; Synthesizers; Tuning; Voltage-controlled oscillators;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-3377-3
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2009.5135573
