• DocumentCode
    2299009
  • Title

    An 8–18GHz 0.18W wideband recursive receiver MMIC with gain-reuse

  • Author

    Ma, Desheng ; Foster Dai, Fa ; Jaeger, Richard C. ; Irwin, J. David

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Auburn Univ., Auburn, AL, USA
  • fYear
    2009
  • fDate
    7-9 June 2009
  • Firstpage
    463
  • Lastpage
    466
  • Abstract
    This paper presents an 8-18 GHz wideband receiver with superheterodyne topology. In order to save power, both RF and IF signals share the tunable transconductance stage. The IF output of the first mixer is fed to its tunable input stage for IF amplification in a recursive manner, which significantly enhances the gain tuning without increasing the power. The wideband receiver MMIC is implemented in a 0.13 mum SiGe BiCMOS technology and achieves 6.7-7.8 dB noise figure (NF). The average voltage gain of the receiver is measured as 53 dB maximum with 20 dB continual tuning and 36 dB discrete tuning. The average output P1dB is measured as -10 dBm at maximum gain. The receiver dissipates 180 mW with 2.2 V power supply. To the authors´ best knowledge, this is the first fully integrated single-chip receiver MMIC with the coverage of the entire X-band and Ku-band realized on a commercial SiGe process.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; MMIC; semiconductor materials; superheterodyne receivers; BiCMOS technology; IF amplification; Ku-band; RF signal; SiGe; X-band; average voltage gain; frequency 8 GHz to 18 GHz; gain 53 dB; gain-reuse; mixer; noise figure 6.7 dB to 7.8 dB; power 0.18 W; power 180 W; size 0.13 mum; superheterodyne topology; tunable transconductance stage; voltage 2.2 V; wideband recursive receiver MMIC; BiCMOS integrated circuits; Gain measurement; Germanium silicon alloys; MMICs; RF signals; Radio frequency; Silicon germanium; Topology; Transconductance; Wideband; BiCMOS; Ku-band radars; SiGe; Wideband receiver; X-band; gain reuse;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE
  • Conference_Location
    Boston, MA
  • ISSN
    1529-2517
  • Print_ISBN
    978-1-4244-3377-3
  • Electronic_ISBN
    1529-2517
  • Type

    conf

  • DOI
    10.1109/RFIC.2009.5135581
  • Filename
    5135581