DocumentCode :
2299009
Title :
An 8–18GHz 0.18W wideband recursive receiver MMIC with gain-reuse
Author :
Ma, Desheng ; Foster Dai, Fa ; Jaeger, Richard C. ; Irwin, J. David
Author_Institution :
Dept. of Electr. & Comput. Eng., Auburn Univ., Auburn, AL, USA
fYear :
2009
fDate :
7-9 June 2009
Firstpage :
463
Lastpage :
466
Abstract :
This paper presents an 8-18 GHz wideband receiver with superheterodyne topology. In order to save power, both RF and IF signals share the tunable transconductance stage. The IF output of the first mixer is fed to its tunable input stage for IF amplification in a recursive manner, which significantly enhances the gain tuning without increasing the power. The wideband receiver MMIC is implemented in a 0.13 mum SiGe BiCMOS technology and achieves 6.7-7.8 dB noise figure (NF). The average voltage gain of the receiver is measured as 53 dB maximum with 20 dB continual tuning and 36 dB discrete tuning. The average output P1dB is measured as -10 dBm at maximum gain. The receiver dissipates 180 mW with 2.2 V power supply. To the authors´ best knowledge, this is the first fully integrated single-chip receiver MMIC with the coverage of the entire X-band and Ku-band realized on a commercial SiGe process.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC; semiconductor materials; superheterodyne receivers; BiCMOS technology; IF amplification; Ku-band; RF signal; SiGe; X-band; average voltage gain; frequency 8 GHz to 18 GHz; gain 53 dB; gain-reuse; mixer; noise figure 6.7 dB to 7.8 dB; power 0.18 W; power 180 W; size 0.13 mum; superheterodyne topology; tunable transconductance stage; voltage 2.2 V; wideband recursive receiver MMIC; BiCMOS integrated circuits; Gain measurement; Germanium silicon alloys; MMICs; RF signals; Radio frequency; Silicon germanium; Topology; Transconductance; Wideband; BiCMOS; Ku-band radars; SiGe; Wideband receiver; X-band; gain reuse;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE
Conference_Location :
Boston, MA
ISSN :
1529-2517
Print_ISBN :
978-1-4244-3377-3
Electronic_ISBN :
1529-2517
Type :
conf
DOI :
10.1109/RFIC.2009.5135581
Filename :
5135581
Link To Document :
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