A 5GHz band low noise and wide tuning range Si-CMOS VCO

Author

Tuan Thanh Ta ; Kameda, Suguru ; Takagi, Tadashi ; Tsubouchi, Kazuo

Author_Institution

Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan

fYear

2009

fDate

7-9 June 2009

Firstpage

571

Lastpage

574

Abstract

In this work, a fully integrated 5 GHz Voltage Controlled Oscillator (VCO) is presented. The VCO is designed with 0.18 mum mixed signal Complementary Metal Oxide Semiconductor (CMOS) process of Taiwan Semiconductor Manufactuning Company (TSMC), Limited. To achieve low phase noise, a varactor circuit is designed to cancel effects of 1/f noise and fluctuation of capacitance due to harmonics. The proposed VCO has tuning range from 5.1 GHz to 6.1 GHz (17.9%) and phase noise of lower than -110.8 dBc/Hz at 1MHz offset over the full tuning range. Figure-of-merit-with-tuning-range (FOMT) of the proposed VCO is -182dBc/Hz.

Keywords

CMOS integrated circuits; field effect MIMIC; mixed analogue-digital integrated circuits; varactors; voltage-controlled oscillators; 1/f noise; Si; complementary metal oxide semiconductor; frequency 1 MHz; frequency 5.1 GHz to 6.1 GHz; low noise VCO; mixed signal CMOS; size 0.18 mum; varactor circuit; voltage controlled oscillator; wide tuning range; CMOS process; Circuit optimization; Noise cancellation; Phase noise; Semiconductor device noise; Signal design; Signal processing; Tuning; Varactors; Voltage-controlled oscillators; 5GHz; CMOS; VCO; low noise; wide tuning range;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE

Conference_Location

Boston, MA

ISSN

1529-2517

Print_ISBN

978-1-4244-3377-3

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2009.5135606

Filename

5135606