A non-uniform GaN power TWA for 2 to 10 GHz suitable for square-wave operation

Author

Meliani, C. ; Ersoy, E. ; Chaturvedi, N. ; Freyer, S. ; Würfl, J. ; Heinrich, W. ; Tränkle, G.

Author_Institution

Ferdinand-Braun-Inst. fur Hochstfrequenztechnik (FBH), Berlin, Germany

fYear

2009

fDate

7-9 June 2009

Firstpage

591

Lastpage

594

Abstract

A broadband GaN monolithic power amplifier covering the 2 to 10 GHz band is presented. It is based on a non-uniform traveling-wave architecture using 4 transistor cells with 4times125 mum gate width each. The amplifier achieves 7 to 11 dB small signal gain in the frequency band between 2 and 10 GHz. The circuit delivers between 2.5 and 4.5 W over the bandwidth from 2 GHz up to 10 GHz. At maximum output power a PAE higher than 20% is achieved. In addition, large signal operation with square wave signals have been demonstrated at 1 and 2 Gbps, with 5 W output power at 1 Gbps.

Keywords

III-V semiconductors; gallium compounds; power amplifiers; travelling wave amplifiers; wide band gap semiconductors; wideband amplifiers; GaN; GaN monolithic power amplifier; bit rate 1 Gbit/s; bit rate 2 Gbit/s; broadband amplifier; frequency 2 GHz to 10 GHz; gain 7 dB to 11 dB; power 2.5 W to 4.5 W; power 5 W; power TWA; traveling-wave architecture; Bandwidth; Broadband amplifiers; Circuits; Distributed amplifiers; Frequency; Gallium nitride; High power amplifiers; Narrowband; Power amplifiers; Power generation; GaN; broadband; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE

Conference_Location

Boston, MA

ISSN

1529-2517

Print_ISBN

978-1-4244-3377-3

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2009.5135611

Filename

5135611