Title :
Comprehensive comparative analysis of two types of commonly-used layouts of IGBT packages
Author :
Yulin Zhong ; Jinlei Meng ; Puqi Ning ; Dong Zhang ; Xuhui Wen
Author_Institution :
Key Lab. of Power Electron. & Electr. Drive, Beijing, China
Abstract :
A reasonable design of IGBT internal layout is essential to maximize the overall electrical and thermal performance of an IGBT module. For two types of typical layouts of one commonly-used IGBT package with multiple chips connected in parallel, a module-level IGBT equivalent circuit based on chip-level model and accurate interconnection parasitics was constructed in this paper. Comparative simulations have been done to evaluate the advantages and disadvantages of the two types of layouts. The results not only demonstrate the internal electromagnetic & thermal physics which is very hard to be observed in experiments, but also offers a useful guidance for practical application of high power IGBT modules.
Keywords :
equivalent circuits; insulated gate bipolar transistors; power bipolar transistors; IGBT internal layout; IGBT module; chip-level model; commonly-used IGBT package; commonly-used layouts; comparative simulations; electrical performance; high-power IGBT modules; interconnection parasitics; internal electromagnetic; module-level IGBT equivalent circuit; thermal performance; thermal physics; Inductance; Insulated gate bipolar transistors; Integrated circuit modeling; Layout; Resistance; Switches; Transient analysis;
Conference_Titel :
Electrical Machines and Systems (ICEMS), 2014 17th International Conference on
Conference_Location :
Hangzhou
DOI :
10.1109/ICEMS.2014.7013803
