Experimental research on stray inductance extraction of planar bus bars based on HVIGBT dynamic characteristics

Author

Liqiang Yuan ; Qing Gu ; Gaohui Feng ; Zhengming Zhao ; Rilong Yang ; Wensheng Wang

Author_Institution

Dept. of Electr. Eng., Tsinghua Univ., Beijing, China

fYear

2014

fDate

22-25 Oct. 2014

Firstpage

1957

Lastpage

1962

Abstract

The close relationship between the stray parameters of large-size DC bus bars and the switching behavior of power semiconductor devices plays one of the key poles in the reliability and performance of high power voltage source inverters. Based on this relationship, the experimental investigation of stray parameter extraction of bus bars is described in this paper. The experimental extraction method is improved on several aspects, such as the selection of the appropriate dynamic period in the semiconductor switching process, the improved calculation formula less dependent on the di/dt measurement, the multi-pulse series test, etc. The experiment is implemented in an actual 1.2MW inverter equipped with 3.3kV/1200A HVIGBTs. The stray inductance extraction result are analyzed and compared with the traditional ones. The validity of the experimental extraction method of stray parameters is proved.

Keywords

busbars; insulated gate bipolar transistors; invertors; power semiconductor devices; DC bus bars; HVIGBT dynamic characteristics; current 1200 A; di/dt measurement; high power voltage source inverters; multipulse series test; planar bus bars; power 1.2 MW; power semiconductor devices; semiconductor switching process; stray inductance extraction; stray parameter extraction; switching behavior; voltage 3.3 kV; Bars; Inductance; Insulated gate bipolar transistors; Inverters; Logic gates; Switches; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Machines and Systems (ICEMS), 2014 17th International Conference on

Conference_Location

Hangzhou

Type

conf

DOI

10.1109/ICEMS.2014.7013804

Filename

7013804