Title :
A GSM-EDGE power amplifier with a BiFET current limiting bias circuit
Author :
De la Rosa, G. ; Osika, D. ; Scheinberg, N.
Author_Institution :
ANADIGICS Inc., Warren, NJ, USA
Abstract :
A dual mode BiFET GSM-EDGE Power amplifier with built in current limiting circuitry is presented. The amplifier incorporates a bias circuit on the power stage that limits the base current of the HBT cells thus limiting the collector current to a predetermined level of 2.1 Amps. This novel scheme increases the ruggedness of the power amplifier when subjected to high mismatch conditions while maintaining matched load GMSK PAE and EDGE linearity. The amplifier operates in the 850/900 band, with a 3.6 V supply, and it exhibits an output power of 35 dBm with a PAE of 55% for GMSK mode. In EDGE mode, it exhibits an output power of 29.5 dBm with 25% PAE and an ORFS of -60 dBc at +/-400 KHz offsets.
Keywords :
cellular radio; current limiters; field effect transistors; minimum shift keying; power amplifiers; EDGE linearity; Enhanced Data rates for Global Evolution; GSM-EDGE power amplifier; Global System for Mobile communications; base current; collector current; current limiting bias circuit; dual mode BiFET; matched load GMSK PAE; mismatch conditions; voltage 3.6 V; Circuits; Current limiters; GSM; Heterojunction bipolar transistors; High power amplifiers; Linearity; PHEMTs; Power amplifiers; Power generation; Resistors; BiFET; Bias circuits; Current limiting; EDGE; GSM; HBT; PHEMT; Power Amplifier; Ruggedness;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-3377-3
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2009.5135612
