Title :
Accurate closed-form capacitance extraction formulas for metal fill in RFICs
Author :
Gaskill, Steven G. ; Shilimkar, Vikas S. ; Weisshaar, Andreas
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Oregon State Univ., Corvallis, OR, USA
Abstract :
Metal fill patterning in modern IC processes forces many floating metal structures to exist in the fabricated design. The number of these structures makes electrostatic capacitance extraction difficult and the capacitance impact may be neglected or incorrectly approximated. In this paper closed-form, semi-empirical formulas are presented for a single layer of floating metal fill between two parallel plates. The new formulas have been applied to calculating the ground capacitance of a MIM capacitor. The maximum error was less than 1% for a wide range of metal fill dimensions in a 0.18 m process.
Keywords :
MIM devices; integrated circuit design; radiofrequency integrated circuits; MIM capacitor; RFIC; closed-form capacitance extraction formulas; closed-form formulas; electrostatic capacitance extraction; floating metal structures; metal fill patterning; modern IC processes; semi-empirical formulas; size 0.18 mum; Capacitance; Closed-form solution; Computer science; Dielectrics; MIM capacitors; Metal-insulator structures; Permittivity; Planarization; Radiofrequency integrated circuits; Shape; CMP; Capacitance; MIM; Metal Fill; Polarization;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-3377-3
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2009.5135616
