DocumentCode :
2299731
Title :
Light trapping and solar energy harvesting with 3D photonic crystals
Author :
John, Sajeev
fYear :
2012
fDate :
23-27 Sept. 2012
Firstpage :
126
Lastpage :
126
Abstract :
Summary form only given. Photonic crystals are widely known for their light-trapping capabilities. This is often associated with the occurrence of a photonic band gap or other suppression in the electromagnetic density of states. This also enables unprecedented forms of strong-coupling between light and matter. A less studied form of light-trapping occurs in the higher bands of a photonic crystal, where the electromagnetic density of states is enhanced rather than suppressed. This enables strong absorption of light from a broadband source over a wide acceptance angle in a material with weak intrinsic absorption. We describe designs of 3D photonic crystal silicon-based solar cells that enhance the overall absorption of sunlight using architectures consisting of less than 1 micron (equivalent bulk thickness) of silicon and no metallic mirrors. These crystals trap light through a parallel-to-interface negative refraction (PIR) effect that occurs over a broad angular and frequency range. These 3D photonic crystals exhibit an enhanced electromagnetic density of states, consisting of slow group velocity modes, in which the flow of energy is transverse to the depth of a thin film of material. In the case of a modulated nanowire photonic crystal solar cell, each wire contains a radial P-N junction and regions between the wires are filled with silica. This structure provides incident angles exceptional light absorption over a broad range of from 0 to 80 degrees. It is shown to absorb roughly 75% of all available sunlight in the wavelength range of 400-1000 nm. Power efficiencies in the range of 15-20% are shown using one micron of silicon. These nanostructured photonic crystals offer additional opportunities for solar spectral reshaping and novel electronic management to rival and possibly surpass the well-known Shockley-Queisser power efficiency limit.
Keywords :
elemental semiconductors; energy harvesting; nanowires; p-n junctions; photonic band gap; photonic crystals; semiconductor thin films; silicon; solar cells; 3D photonic crystal silicon-based solar cell design; 3D photonic crystals; PIR effect; Shockley-Queisser power efficiency limit; Si; efficiency 15 percent to 20 percent; electromagnetic density of state suppression; electronic management; light trapping; modulated nanowire photonic crystal solar cell; nanostructured photonic crystals; parallel-to-interface negative refraction effect; photonic band gap; radial p-n junction; slow group velocity modes; solar energy harvesting; solar spectral reshaping; sunlight absorption; thin film; wavelength 400 nm to 1000 nm; weak intrinsic absorption; Absorption; Electromagnetics; Photonic crystals; Photovoltaic cells; Silicon; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
Type :
conf
DOI :
10.1109/IPCon.2012.6358521
Filename :
6358521
Link To Document :
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