Title :
High power stable single-fundamental mode vertical cavity surface-emitting lasers with a zinc diffused absorber
Author :
Chen, C.C. ; Liaw, S.J. ; Yang, Y.J. ; Yu, Y.C. ; Lin, C.Y.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
In conclusion, we have demonstrated a stable single-fundamental mode VCSEL with a maximum output power of 3.2 and 4.4 mW at room temperature and -7C respectively. The single mode operation was obtained using a higher order mode absorber formed by Zn diffusion with a mode suppression ratio better than 30 dB. With optimization on the device structure a single mode output power larger than 5 mW.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; laser stability; optimisation; quantum well lasers; surface emitting lasers; -7 C; 3.2 mW; 4.4 mW; GaAs-AlGaAs; MQW lasers; VCSEL; Zn; Zn diffusion; device structure; high power stable single-fundamental mode vertical cavity surface-emitting lasers; higher order mode absorber; maximum output power; mode suppression ratio; optimization; room temperature; single mode operation; single mode output power; stable single-fundamental mode VCSEL; zinc diffused absorber; Electrodes; Laser modes; Laser stability; Power generation; Power lasers; Protons; Temperature; Threshold current; Vertical cavity surface emitting lasers; Zinc;
Conference_Titel :
Optical Fiber Communication Conference and Exhibit, 2002. OFC 2002
Print_ISBN :
1-55752-701-6
DOI :
10.1109/OFC.2002.1036268
