DocumentCode
2300386
Title
High-performance 1.55 μm resonant cavity enhanced photodetector
Author
Kimukin, Ibrahim ; Biyikli, Necmi ; Ozbay, Ekmel
Author_Institution
Dept. of Phys., Bilkent Univ., Ankara, Turkey
fYear
2002
fDate
17-22 Mar 2002
Firstpage
155
Lastpage
156
Abstract
In conclusion, we have demonstrated highspeed, and high-efficiency resonant cavity enhanced (RCE) InGaAs based p-i-n photodetectors. A peak quantum efficiency of 66% was measured along with 31 GHz bandwidth which corresponds to 20 GHz bandwidth-efficiency product. The photoresponse was linear up to 6 mW optical power, where the devices exhibited 5 mA photocurrent.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; optical resonators; p-i-n photodiodes; photodetectors; 1.55 micron; 31 GHz; 5 mA; 6 mW; GHz bandwidth; InGaAs; high-efficiency resonant cavity enhanced InGaAs based p-i-n photodetectors; highspeed; mA photocurrent; mW optical power; peak quantum efficiency; photoresponse; Active filters; Optical fiber devices; Optical filters; Optical noise; Optical receivers; Optical sensors; Photodetectors; Resonance; Tunable circuits and devices; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication Conference and Exhibit, 2002. OFC 2002
Print_ISBN
1-55752-701-6
Type
conf
DOI
10.1109/OFC.2002.1036271
Filename
1036271
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