Title :
High-linearity monolithically integrated photodiodes and Wilkinson power combiner at 20 GHz
Author :
Fu, Yang ; Pan, Huapu ; Hu, Chong ; Campbell, Joe
Author_Institution :
Dept. of Electr. Eng., Univ. of Virginia, Charlottesville, VA, USA
Abstract :
Photodiodes monolithically integrated with a Wilkinson power combiner have achieved over 50 dBm of third-order intercept point (OIP3) at 20 GHz and 64 mA photocurrent level.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; monolithic integrated circuits; photoconductivity; photodiodes; InGaAs-InP; Wilkinson power combiner; current 64 mA; frequency 20 GHz; high-linearity monolithically integrated photodiodes; photocurrent; third-order intercept point;
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-5368-9
DOI :
10.1109/PHOTONICS.2010.5698735
