• DocumentCode
    2300661
  • Title

    High-linearity monolithically integrated photodiodes and Wilkinson power combiner at 20 GHz

  • Author

    Fu, Yang ; Pan, Huapu ; Hu, Chong ; Campbell, Joe

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Virginia, Charlottesville, VA, USA
  • fYear
    2010
  • fDate
    7-11 Nov. 2010
  • Firstpage
    22
  • Lastpage
    23
  • Abstract
    Photodiodes monolithically integrated with a Wilkinson power combiner have achieved over 50 dBm of third-order intercept point (OIP3) at 20 GHz and 64 mA photocurrent level.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; monolithic integrated circuits; photoconductivity; photodiodes; InGaAs-InP; Wilkinson power combiner; current 64 mA; frequency 20 GHz; high-linearity monolithically integrated photodiodes; photocurrent; third-order intercept point;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE Photonics Society, 2010 23rd Annual Meeting of the
  • Conference_Location
    Denver, CO
  • ISSN
    -
  • Print_ISBN
    978-1-4244-5368-9
  • Electronic_ISBN
    -
  • Type

    conf

  • DOI
    10.1109/PHOTONICS.2010.5698735
  • Filename
    5698735
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2300661