Title :
Gain and spontaneous emission characteristics of high al-content AlGaN quantum well lasers
Author :
Zhang, Jing ; Zhao, Hongping ; Tansu, Nelson
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
The optical gain properties of high Al-content AlGaN quantum wells are analyzed for deep UV lasers. TM-polarized gain is expected for high Al-content AlGaN quantum wells attributed from the conduction crystal-field split-hole transition.
Keywords :
III-V semiconductors; aluminium compounds; amplification; crystal field interactions; gallium compounds; quantum well lasers; AlGaN; TM-polarized gain; conduction crystal field split-hole transition; deep UV lasers; optical gain; quantum well lasers; spontaneous emission characteristics;
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-5368-9
DOI :
10.1109/PHOTONICS.2010.5698758
