• DocumentCode
    2300970
  • Title

    Gain and spontaneous emission characteristics of high al-content AlGaN quantum well lasers

  • Author

    Zhang, Jing ; Zhao, Hongping ; Tansu, Nelson

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
  • fYear
    2010
  • fDate
    7-11 Nov. 2010
  • Firstpage
    63
  • Lastpage
    64
  • Abstract
    The optical gain properties of high Al-content AlGaN quantum wells are analyzed for deep UV lasers. TM-polarized gain is expected for high Al-content AlGaN quantum wells attributed from the conduction crystal-field split-hole transition.
  • Keywords
    III-V semiconductors; aluminium compounds; amplification; crystal field interactions; gallium compounds; quantum well lasers; AlGaN; TM-polarized gain; conduction crystal field split-hole transition; deep UV lasers; optical gain; quantum well lasers; spontaneous emission characteristics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE Photonics Society, 2010 23rd Annual Meeting of the
  • Conference_Location
    Denver, CO
  • ISSN
    -
  • Print_ISBN
    978-1-4244-5368-9
  • Electronic_ISBN
    -
  • Type

    conf

  • DOI
    10.1109/PHOTONICS.2010.5698758
  • Filename
    5698758
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2300970