DocumentCode :
2300979
Title :
Physical properties of Ga(NAsP)/GaP QW lasers grown by MOVPE
Author :
Hossain, Nadir ; Jin, Shirong R. ; Sweeney, Stephen J. ; Liebich, Sven ; Reinhard, Stefan ; Volz, Kerstin ; Kunert, Bernardette ; Stolz, Wolfgang
Author_Institution :
Adv. Technol. Inst., Univ. of Surrey, Guildford, UK
fYear :
2010
fDate :
7-11 Nov. 2010
Firstpage :
65
Lastpage :
66
Abstract :
We are reporting for the first time, lasing operation at room temperature (RT) with a low threshold current density (Jth) in novel direct band-gap Ga(NAsP)/GaP QW lasers. A carrier leakage process is found to dominate the temperature dependence of the laser threshold current.
Keywords :
III-V semiconductors; MOCVD; arsenic compounds; gallium compounds; leakage currents; nitrogen compounds; quantum well lasers; semiconductor lasers; semiconductor quantum wells; vapour phase epitaxial growth; Ga(NAsP)-GaP; MOVPE; carrier leakage; direct bandgap QW lasers; laser threshold current; lasing operation; quantum well lasers; threshold current density;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
ISSN :
-
Print_ISBN :
978-1-4244-5368-9
Electronic_ISBN :
-
Type :
conf
DOI :
10.1109/PHOTONICS.2010.5698759
Filename :
5698759
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2300979
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