Improving Q-factor of monolithic inductor by using double ground shield - N+ buried and polysilicon — a realistic simulation

Author

Fonseca, L. ; Kretly, P.N.

Author_Institution

Dept. of Microwave & Opt. - DMO, Univ. of Campinas - UNICAMP, Campinas

fYear

2008

fDate

4-6 June 2008

Firstpage

1

Lastpage

4

Abstract

This work presents a new alternative to improve integrated inductor performance, incorporating double ground shield using polysilicon and n+ buried layer, providing a fully shield and preventing the electric field penetration. This technique was compared with conventional inductors and improves Q-factor up to 50% at 3.5, 4 and 5 GHz. The results were obtained based on AMS 0.35 mum BiCMOS technology. This method can be applied to any BiCMOS technology.

Keywords

BiCMOS integrated circuits; MMIC; Q-factor; electric fields; inductors; BiCMOS technology; Q-factor; double ground shield; electric field penetration; frequency 3.5 GHz; frequency 4 GHz; frequency 5 GHz; integrated inductor performance; monolithic inductor; polysilicon; size 0.35 mum; Analytical models; BiCMOS integrated circuits; Coils; Eddy currents; Inductors; Magnetic separation; Q factor; Shape; Solids; Strips; Q-factor; ground shield; inductor; n+buried layer; poly;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications and Electronics, 2008. ICCE 2008. Second International Conference on

Conference_Location

Hoi an

Print_ISBN

978-1-4244-2425-2

Electronic_ISBN

978-1-4244-2426-9

Type

conf

DOI

10.1109/CCE.2008.4578923

Filename

4578923