Title :
Improving Q-factor of monolithic inductor by using double ground shield - N+ buried and polysilicon — a realistic simulation
Author :
Fonseca, L. ; Kretly, P.N.
Author_Institution :
Dept. of Microwave & Opt. - DMO, Univ. of Campinas - UNICAMP, Campinas
Abstract :
This work presents a new alternative to improve integrated inductor performance, incorporating double ground shield using polysilicon and n+ buried layer, providing a fully shield and preventing the electric field penetration. This technique was compared with conventional inductors and improves Q-factor up to 50% at 3.5, 4 and 5 GHz. The results were obtained based on AMS 0.35 mum BiCMOS technology. This method can be applied to any BiCMOS technology.
Keywords :
BiCMOS integrated circuits; MMIC; Q-factor; electric fields; inductors; BiCMOS technology; Q-factor; double ground shield; electric field penetration; frequency 3.5 GHz; frequency 4 GHz; frequency 5 GHz; integrated inductor performance; monolithic inductor; polysilicon; size 0.35 mum; Analytical models; BiCMOS integrated circuits; Coils; Eddy currents; Inductors; Magnetic separation; Q factor; Shape; Solids; Strips; Q-factor; ground shield; inductor; n+buried layer; poly;
Conference_Titel :
Communications and Electronics, 2008. ICCE 2008. Second International Conference on
Conference_Location :
Hoi an
Print_ISBN :
978-1-4244-2425-2
Electronic_ISBN :
978-1-4244-2426-9
DOI :
10.1109/CCE.2008.4578923
