DocumentCode
2301051
Title
Photoconductive Semiconductor Switch for Microwave Applications
Author
Karabegovic, Armin ; Connell, Robert M O ; Nunnally, William C.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Missouri, Columbia, MO
fYear
2008
fDate
27-31 May 2008
Firstpage
9
Lastpage
12
Abstract
A procedure for choosing the dimensions of a photoconductive semiconductor switch (PCSS) for operation at microwave switching frequencies, and particularly at 10.0 GHZ, is described. The critical dimension is the switch length (electrode separation), which must be small enough to force photo-induced charge removal during switch turn-off via sweep out rather than recombination. The switch depth in the direction of turn-on optical pulse absorption must be several optical absorption depths long to ensure absorption of all the incident light, which optimizes optical to electrical signal gain. The switch width is determined in conjunction with the peak intensity of the optical pulse because the switch width-optical intensity product, which represents optical power, determines both the on-state switch resistance and the turn-off delay time. Simulations show that a switch with a 0.5 mum length, 5.0 mum depth, and 20 mum width, illuminated with 1.0 W optical pulses at 10 GHz, will have a 0.23 Omega on-state resistance and a 46 ps turn-off time.
Keywords
microwave switches; photoconducting switches; depth 5 mum; frequency 10 GHz; microwave applications; microwave switching frequencies; on-state switch resistance; optical absorption depths; photo-induced charge removal; photoconductive semiconductor switch; power 1 W; resistance 0.23 ohm; switch depth; switch turn-off; switch width-optical intensity product; time 46 ps; turn-off delay time; turn-on optical pulse absorption; Absorption; Breakdown voltage; Electric breakdown; Electrodes; Gallium arsenide; Optical amplifiers; Optical pulses; Optical switches; Photoconducting devices; Power semiconductor switches;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE International Power Modulators and High Voltage Conference, Proceedings of the 2008
Conference_Location
Las Vegas, NE
Print_ISBN
978-1-4244-1534-2
Electronic_ISBN
978-1-4244-1535-9
Type
conf
DOI
10.1109/IPMC.2008.4743563
Filename
4743563
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