Title :
Nanolasers grown on polycrystalline silicon
Author :
Ng, Kar Wei ; Ko, Wai Son ; Chen, Roger ; Tran, Thai-Truong D. ; Lu, Fanglu ; Chuang, Linus C. ; Sedgwick, Forrest G. ; Chang-Hasnain, Connie
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
Abstract :
MOCVD growth of single crystalline GaAs-based nanoneedle/nanopillar lasers on polycrystalline silicon is demonstrated. Superior material quality, high density and light trapping capability make these structures on polysilicon-based substrates attractive for low-cost and high-efficiency photovoltaic applications.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; nanophotonics; semiconductor growth; semiconductor lasers; silicon; GaAs; MOCVD growth; Si; high density; light trapping; nanolasers; nanoneedle lasers; nanopillar lasers; photovoltaic applications; silicon; superior material quality;
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-5368-9
DOI :
10.1109/PHOTONICS.2010.5698766
