Inductive Switching with a 1-kA (Saturation) Normally on SiC JFET Switch Module

Silicon-carbide junction field-effect transistors (JFETs) are maturing in performance, reliability, and manufacturability, especially with voltage ratings ranging from 600-1800 V. The vertical channel JFET (VJFET) with extremely low specific on-resistance (< 0.25 Omega-mm²) is now available. In this paper, new results are reported on a two-switch module packaged in a commercially available plastic half-bridge power module. The switches can handle steady currents up to 500 A, with at least 1 kA available before drain-current saturation occurs. Switching results with a diode-clamped inductive load are reported to investigate voltage sharing between the two series devices when switched simultaneously. The normally on characteristics of these JFET switches are ideal for current sources like charging of inductive loads.