Title :
Inductive Switching with a 1-kA (Saturation) Normally on SiC JFET Switch Module
Author :
Mazzola, M. ; Gafford, J. ; Parker, C. ; Tian, G. ; Molen, M.
Author_Institution :
Center for Adv. Vehicular Syst., Mississippi State Univ., Starkville, MS
Abstract :
Silicon-carbide junction field-effect transistors (JFETs) are maturing in performance, reliability, and manufacturability, especially with voltage ratings ranging from 600-1800 V. The vertical channel JFET (VJFET) with extremely low specific on-resistance (< 0.25 Omega-mm2) is now available. In this paper, new results are reported on a two-switch module packaged in a commercially available plastic half-bridge power module. The switches can handle steady currents up to 500 A, with at least 1 kA available before drain-current saturation occurs. Switching results with a diode-clamped inductive load are reported to investigate voltage sharing between the two series devices when switched simultaneously. The normally on characteristics of these JFET switches are ideal for current sources like charging of inductive loads.
Keywords :
field effect transistor switches; junction gate field effect transistors; semiconductor device reliability; silicon compounds; wide band gap semiconductors; SiC; current 1 kA; diode-clamped inductive load; drain-current saturation; inductive switching; junction field-effect transistors; plastic half-bridge power module; reliability; silicon-carbide JFET switch module; vertical channel JFET; voltage 600 V to 1800 V; Bandwidth; Capacitance; Costs; FETs; Leakage current; Silicon carbide; Switches; Temperature; Vehicle dynamics; Voltage;
Conference_Titel :
IEEE International Power Modulators and High Voltage Conference, Proceedings of the 2008
Conference_Location :
Las Vegas, NE
Print_ISBN :
978-1-4244-1534-2
Electronic_ISBN :
978-1-4244-1535-9
DOI :
10.1109/IPMC.2008.4743566
