Title :
Solutions with Solid State Switches for Pulse Modulators
Author :
Welleman, A. ; Leutwyler, R.
Author_Institution :
Semicond., ABB Switzerland Ltd., Lenzburg
Abstract :
This presentation will show solutions with solid state switches designed and produced for pulse modulators in applications like particle beam accelerators, radar power supplies, medical modulators etc. Examples of semiconductor switches using IGCT (integrated gate commutated thyristor) technology for long pulse modulators as well as switches using fast, high di/dt discharge devices for radar power supplies, Environmental applications and medical modulators with their advantages and disadvantages are presented. Because of the large field experience with the presented switches, also reliability information is included. For on-off switching with reaction times of less than 5 mus the trend with newer technologies like IGBT will be discussed and stackable pressure contact IGBT devices with increased collector-emitter voltage of 4500 V will be presented. These devices, which are in volume production with Vces=2500 V and are mainly in use for high voltage DC power transmission systems, will now become available with Vces=4500 V for pulsed power applications.
Keywords :
insulated gate bipolar transistors; modulators; power semiconductor switches; pulsed power switches; semiconductor device reliability; collector-emitter voltage; high voltage DC power transmission systems; integrated gate commutated thyristor technology; on-off switching; particle beam accelerators; pressure contact IGBT devices; pulse modulators; solid state switches; voltage 2500 V; voltage 4500 V; Insulated gate bipolar transistors; Optical modulation; Particle beams; Power semiconductor switches; Pulse modulation; Pulsed power supplies; Radar applications; Solid state circuits; Thyristors; Voltage;
Conference_Titel :
IEEE International Power Modulators and High Voltage Conference, Proceedings of the 2008
Conference_Location :
Las Vegas, NE
Print_ISBN :
978-1-4244-1534-2
Electronic_ISBN :
978-1-4244-1535-9
DOI :
10.1109/IPMC.2008.4743568