DocumentCode :
2301534
Title :
Properties of the HgCdTe linear-mode e-APD
Author :
Beck, J. ; Kinch, M. ; Scritchfield, R. ; Woodall, M. ; Ohlson, M. ; Wood, L. ; Mitra, P. ; Robinson, J.
fYear :
2010
fDate :
7-11 Nov. 2010
Firstpage :
122
Lastpage :
123
Abstract :
The band structure of Hg1-xCdxTe results in an electron avalanche photodiode (e-APD) that exhibits single carrier, deterministic, noiseless gain. Data and analysis on 5μm cutoff, Hg0.7Cd0.3Te e-APD gated-imaging arrays with sub-photon sensitivity will be presented.
Keywords :
II-VI semiconductors; avalanche photodiodes; band structure; cadmium compounds; focal planes; mercury compounds; wide band gap semiconductors; Hg0.7Cd0.3Te; band structure; electron avalanche photodiode; linear-mode e-APD gated-imaging arrays; noiseless gain; subphoton sensitivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
ISSN :
-
Print_ISBN :
978-1-4244-5368-9
Electronic_ISBN :
-
Type :
conf
DOI :
10.1109/PHOTONICS.2010.5698788
Filename :
5698788
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2301534
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