• DocumentCode
    2301549
  • Title

    Planar InAlAs based separated absorption, transport, charge, and multiplication avalanche photodiode with large area and bandwidth-enhancement effect under high-sensitivity operation

  • Author

    Shi, Jin-Wei ; Wu, Z.-Y. ; Kuo, F.-M.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Central Univ., Taoyuan, Taiwan
  • fYear
    2010
  • fDate
    7-11 Nov. 2010
  • Firstpage
    124
  • Lastpage
    125
  • Abstract
    We demonstrate 10Gbit/sec planar InAlAs based separated-absorption-transport-charge-multiplication avalanche photodiodes with a large active diameter (~50μm). By inserting InP transport layers, bandwidth-enhancement under 0.9Vbr has been observed, which releases internal-transient-limited bandwidth and realizes high-sensitivity 10Gbit/sec transmission.
  • Keywords
    III-V semiconductors; aluminium compounds; avalanche photodiodes; indium compounds; light absorption; light transmission; InAlAs-InP; bandwidth-enhancement effect; bit rate 10 Gbit/s; high-sensitivity transmission; internal-transient-limited bandwidth; planar based separated-absorption-transport-charge-multiplication avalanche photodiodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE Photonics Society, 2010 23rd Annual Meeting of the
  • Conference_Location
    Denver, CO
  • ISSN
    -
  • Print_ISBN
    978-1-4244-5368-9
  • Electronic_ISBN
    -
  • Type

    conf

  • DOI
    10.1109/PHOTONICS.2010.5698789
  • Filename
    5698789
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2301549