DocumentCode :
2301598
Title :
Impact ionization under dynamic fields
Author :
Hayat, Majeed M. ; Ramirez, David A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of New Mexico, Albuquerque, NM, USA
fYear :
2010
fDate :
7-11 Nov. 2010
Firstpage :
128
Lastpage :
129
Abstract :
In this paper we outline the potential benefits of modulating the applied electric field on the performance of avalanche photodiodes (APDs). Our approach enables the calculation of the impulse response, gain and and excess noise factor, breakdown probability, as well as pulse duration time all under conditions of a dynamic field in the multiplication region.
Keywords :
avalanche photodiodes; electric breakdown; impact ionisation; impulse noise; transient response; avalanche photodiode; breakdown probability; dynamic fields; excess noise factor; impact ionization; impulse gain; impulse response; pulse duration time;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
ISSN :
-
Print_ISBN :
978-1-4244-5368-9
Electronic_ISBN :
-
Type :
conf
DOI :
10.1109/PHOTONICS.2010.5698791
Filename :
5698791
Link To Document :
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