• DocumentCode
    2301755
  • Title

    High responsivity, low dark current, large area, heterogenously bonded annular thin-film silicon photodetectors

  • Author

    Dhar, Sulochana ; Jokerst, Nan M.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Duke Univ., Durham, NC, USA
  • fYear
    2012
  • fDate
    23-27 Sept. 2012
  • Firstpage
    378
  • Lastpage
    379
  • Abstract
    Thin-film crystalline silicon photodiodes with the highest uncooled responsivity to dark current density ratio (0.30-0.54 cm2/nW for λ= 470 nm-600 nm) reported to date are described herein for integrated biomedical imaging and biochemical sensing.
  • Keywords
    current density; integrated optoelectronics; photodetectors; photodiodes; silicon-on-insulator; thin film devices; Si; biochemical sensing; high uncooled responsivity; integrated biomedical imaging; large area heterogeneously bonded annular thin-film silicon photodetectors; thin-film crystalline silicon photodiodes; wavelength 470 nm to 600 nm; Biomedical optical imaging; Dark current; Photodetectors; Silicon; Substrates; silicon detectors; thin-film devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2012 IEEE
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    978-1-4577-0731-5
  • Type

    conf

  • DOI
    10.1109/IPCon.2012.6358650
  • Filename
    6358650