Title :
A transimpedance amplifier for OC-768 applications designed using a SiGe HBT BiCMOS technology
Author :
Steidl, S.A. ; Rowe, D. ; Krawczyk, T.W. ; Wong, P. ; Tam, A. ; Hornbuckle, C.
Author_Institution :
Sierra Monolithics Inc., Redondo Beach, CA, USA
Abstract :
TIA´s were designed with transimpedance gains of 230 Ω and 240 Ω, with corresponding bandwidths of 30 GHz and 29 GHz, respectively. Because the simulated results in the 50 Ω test environment match reasonably well with the measured results, it is expected that the TIA performance, when packaged with an appropriate photodiode, will improve, as the simulated results for a TIA with a photodiode indicate.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; amplifiers; integrated circuit packaging; integrated optoelectronics; optical receivers; photodiodes; 29 GHz; 30 GHz; OC-768 applications; SiGe HBT BiCMOS technology; bandwidths; packaged; photodiode; simulated results; test environment; transimpedance amplifier; transimpedance gains; Bandwidth; BiCMOS integrated circuits; Differential amplifiers; Germanium silicon alloys; Heterojunction bipolar transistors; Optical amplifiers; Resistors; Silicon germanium; Testing; Voltage;
Conference_Titel :
Optical Fiber Communication Conference and Exhibit, 2002. OFC 2002
Print_ISBN :
1-55752-701-6
DOI :
10.1109/OFC.2002.1036358
