Genetic algorithm for optimization of HEMT model parasitic parameters

In this paper, we present a new approach to extract parasitic elements of high electron mobility transistors (HEMTpsilas). By using genetic algorithm (GA), the values of biased-independent parasitic elements will be determined by minimizing the error between calculated and measured S-parameters. Some optimization examples are given for an HEMT from 1 up to 25 GHz. The results show that the proposed method is suitable to determine exactly many parasitic parameters of HEMT model with the excellent fit between measured and calculated S- parameters.