Genetic algorithm for optimization of HEMT model parasitic parameters

Author

Phan Hong Phuong ; Tong Due Thanh

Author_Institution

Telecommun. Dept., Ho Chi Minh City Univ. of Technol., Ho Chi Minh City

fYear

2008

fDate

4-6 June 2008

Firstpage

355

Lastpage

359

Abstract

In this paper, we present a new approach to extract parasitic elements of high electron mobility transistors (HEMTpsilas). By using genetic algorithm (GA), the values of biased-independent parasitic elements will be determined by minimizing the error between calculated and measured S-parameters. Some optimization examples are given for an HEMT from 1 up to 25 GHz. The results show that the proposed method is suitable to determine exactly many parasitic parameters of HEMT model with the excellent fit between measured and calculated S- parameters.

Keywords

S-parameters; genetic algorithms; high electron mobility transistors; HEMT model; S-parameters; genetic algorithm; high electron mobility transistors; Circuit simulation; Equivalent circuits; Genetic algorithms; HEMTs; Integrated circuit modeling; MODFETs; Microwave devices; Microwave theory and techniques; Optimization methods; Packaging; genetic algorithm; microwave devices; millimeter-wave devices; monolithic microwave integrated circuits (MMIC’s); optimization method;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications and Electronics, 2008. ICCE 2008. Second International Conference on

Conference_Location

Hoi an

Print_ISBN

978-1-4244-2425-2

Type

conf

DOI

10.1109/CCE.2008.4578986

Filename

4578986