Title :
Ultrahigh-efficiency phosphor-free InGaN/GaN nanowire white light-emitting diodes on silicon
Author :
Mi, Z. ; Nguyen, H.P.T. ; Zhang, S. ; Djavid, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada
Abstract :
We report on the achievement of InGaN/GaN dot-in-a-wire phosphor-free white light-emitting diodes, which can exhibit a record internal quantum efficiency of ~57% and virtually zero efficiency droop for injection currents up to ~2,200 A/cm2.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; nanophotonics; nanowires; semiconductor quantum dots; wide band gap semiconductors; InGaN-GaN; Si; dot-in-a-wire phosphor-free white light-emitting diodes; injection currents; internal quantum efficiency; ultrahigh-efficiency phosphor-free nanowire white light-emitting diodes; virtually zero efficiency droop; Aluminum gallium nitride; Gallium nitride; Light emitting diodes; Quantum dots; Radiative recombination; Substrates; Temperature measurement;
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
DOI :
10.1109/IPCon.2012.6358676
