High-speed electroabsorption modulators with traveling-wave electrodes

Author

Takeuchi, H. ; Saitoh, Takashi ; Ito, H.

Author_Institution

NTT Photonics Labs., NTT Corp., Kanagawa, Japan

fYear

2002

fDate

17-22 Mar 2002

Firstpage

336

Lastpage

338

Abstract

Two high-speed optical integrated devices utilizing a travelling wave electroabsorption modulator (TW-EA) were presented. The first-ever TW-EA modulator monolithically integrated with a DFB laser (TW-EADFB) has been developed. A UTC-PD and a TW-EA modulator have also been monolithically integrated to configure an optical gate device. A fabricated device was found to offer a minimum gate opening time of 2.3 ps. By optimizing the design and fabrication process, these TW-EA modulators are expected to operate at bit rates higher than 100 Gbit/s.

Keywords

electro-optical modulation; electroabsorption; electrodes; integrated optoelectronics; optical communication equipment; optical design techniques; optical fabrication; photodiodes; 100 Gbit/s; 2.3 ps; DFB laser; TW-EA; TWEA modulator; design process; fabrication process; high-speed optical integrated devices; minimum gate opening time; monolithically integrated; optical gate device; travelling wave electroabsorption modulator; Bandwidth; Electrodes; Fiber nonlinear optics; High speed optical techniques; Microwave devices; Optical amplifiers; Optical modulation; Optical signal processing; Photodiodes; Power lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication Conference and Exhibit, 2002. OFC 2002

Print_ISBN

1-55752-701-6

Type

conf

DOI

10.1109/OFC.2002.1036401

Filename

1036401