DocumentCode :
2302435
Title :
40 Gb/s electro-absorption-modulator-integrated DFB laser with optimized design
Author :
Feng, Hao ; Makino, Toshihiko ; Ogita, Shouichi ; Maruyama, Hideki ; Kondo, Makoto
Author_Institution :
Fujitsu Compound Semicond. Inc., San Jose, CA, USA
fYear :
2002
fDate :
17-22 Mar 2002
Firstpage :
340
Lastpage :
341
Abstract :
A record high modulation bandwidth of over 50 GHz has been achieved for EAM-DFB lasers in the chip-on-carrier level by optimizing the device parameters. The packaged module has shown a record high modulation bandwidth of 45 GHz and dynamic extinction ratio of 9 dB at Vpp of 3.9 V. The 40 Gb/s NRZ-signal 4 km-transmission with standard SM fiber has been demonstrated. This 40 Gb/s EAM-DFB module is believed very promising for 40 Gb/s short distance fiber transmission.
Keywords :
distributed feedback lasers; electro-optical modulation; electroabsorption; integrated circuit packaging; integrated optoelectronics; modules; optical communication equipment; semiconductor lasers; 3.9 V; 40 Gbit/s; 45 GHz; EAM-DFB lasers; EAM-DFB module; NRZ-signal transmission; chip-on-carrier level; device parameters optimisation; dynamic extinction ratio; packaged module; record high modulation bandwidth; short distance fiber transmission; standard SM fiber; Bandwidth; Capacitance; Design optimization; Equivalent circuits; Masers; Microstrip; Optical design; Packaging; Semiconductor device measurement; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communication Conference and Exhibit, 2002. OFC 2002
Print_ISBN :
1-55752-701-6
Type :
conf
DOI :
10.1109/OFC.2002.1036404
Filename :
1036404
Link To Document :
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