DocumentCode
2302662
Title
Fabrication technique of highly dense aligned semiconducting single-walled carbon nanotubes devices
Author
Elkadi, A. ; Decrossas, E. ; El-Ghazaly, S.M.
Author_Institution
Bell Eng. Center, Univ. of Arkansas, Fayetteville, AR, USA
fYear
2012
fDate
23-27 Sept. 2012
Firstpage
485
Lastpage
486
Abstract
A fabrication technique using dielectrophoresis is demonstrated to align semiconducting single-walled carbon nanotubes (s-SWCNTs) and improve electronic devices performance. The proposed method produces highly dense aligned nanotubes (>;40 s-SWCNTs/μm) and low sheet resistance (<;10 KΩ/□).
Keywords
carbon nanotubes; electric resistance; electrophoresis; nanofabrication; nanophotonics; nanotube devices; optical fabrication; semiconductor nanotubes; C; dielectrophoresis; electronic device performance; highly dense aligned semiconducting single-walled carbon nanotube devices; low sheet resistance; s-SWCNT; Carbon nanotubes; Dielectrophoresis; Electrical resistance measurement; Electrodes; Resistance; Scanning electron microscopy; Very large scale integration; Semiconducting single-walled carbon nanotube; dielectrophoresis; very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2012 IEEE
Conference_Location
Burlingame, CA
Print_ISBN
978-1-4577-0731-5
Type
conf
DOI
10.1109/IPCon.2012.6358704
Filename
6358704
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