Title :
InGaAs self-assembly quantum-dot monolithic integration of Semiconductor optical amplifier and electroabsorption modulator
Author :
Lin, Chuan-Han ; Wu, Jui-Pin ; Kuo, Yu-zheng ; Wu, Tsu-Hsiu ; Chiu, Yi-Jen ; Tzeng, T.E. ; Lay, T.S.
Author_Institution :
Dept. of Photonics, Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Abstract :
A monolithically SOA-integrated EAM using InGaAs self-assembly quantum dot has been demonstrated for the first time. By integrating 300μm long EAM with 375μm long SOA, 3.5dB extinction ratio driven by 6V with 3dB optical gain are obtained, indicating a great potential for high-efficient modulation.
Keywords :
III-V semiconductors; amplification; electro-optical modulation; gallium arsenide; indium compounds; self-assembly; semiconductor optical amplifiers; semiconductor quantum dots; InGaAs; electroabsorption modulator; optical gain; quantum dot monolithic integration; self-assembly; semiconductor optical amplifier;
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-5368-9
DOI :
10.1109/PHOTONICS.2010.5698871
