Title :
Development of 10kV, 50A, 50kHz High Repetitive Pulsed Power Modulator Based on IGBT Stacks
Author :
Ryoo, H.J. ; Gussev, Guennadi ; Jang, S.R.
Author_Institution :
KERI, Changwon
Abstract :
This paper describes the development of high repetitive pulsed power modulator based on IGBT stacks. The designed maximum specification of pulsed power modulator is 10 kV, 50 A, 50 kHz pulsed output for the application of PSII, DLC and sputtering system. The proposed pulsed power modulator consists of high efficiency current resonant inverter for the high voltage charging unit and IGBT stacks and related drive circuits for pulsed power output unit. Since it generates high voltage pulse from IGBT stacks without step up transformer, it shows fast pulse rising time(< 200 nsec) and higher rate of pulse repetition(up to 50 kHZ). Also when compared with MOSFET based system, it has an intrinsic capability of handling large currents for the short period at arching condition. The designed high repetitive pulsed power modulator can be used for various kinds of application which require few kilovolts, few tens of ampere pulsed power with a range of few microseconds up to 50 kHz.
Keywords :
driver circuits; insulated gate bipolar transistors; invertors; pulsed power supplies; sputtering; DLC; IGBT stacks; PSII; arching condition; current 50 A; current resonant inverter; drive circuits; frequency 50 kHz; high repetitive pulsed power modulator; high voltage charging unit; short period; sputtering system; voltage 10 kV; Insulated gate bipolar transistors; MOSFET circuits; Pulse circuits; Pulse generation; Pulse inverters; Pulse modulation; Pulse transformers; RLC circuits; Resonant inverters; Sputtering;
Conference_Titel :
IEEE International Power Modulators and High Voltage Conference, Proceedings of the 2008
Conference_Location :
Las Vegas, NE
Print_ISBN :
978-1-4244-1534-2
Electronic_ISBN :
978-1-4244-1535-9
DOI :
10.1109/IPMC.2008.4743668
