• DocumentCode
    2303130
  • Title

    Design of reliable a-Si:H gate driver circuit with high immunity against the vth shift of tft and output fluctuations

  • Author

    Chuang, Min-Chin ; Tu, Chun-Da ; Chou, Kuan-Wen ; Lin, Chih-Lung

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • fYear
    2010
  • fDate
    7-11 Nov. 2010
  • Firstpage
    305
  • Lastpage
    306
  • Abstract
    AC-driving structure is utilized in this new gate driver circuit to suppress VTH shift of a-Si:H TFT. By modulating the biased-stress on pull-down TFT, the floating row lines of panels is effectively eliminated. The results depict this circuit can ensure the longer operating lifetime.
  • Keywords
    amorphous semiconductors; driver circuits; elemental semiconductors; hydrogen; silicon; thin film transistors; AC-driving structure; Si:H; TFT; biased stress; floating row lines; gate driver circuit; immunity; output fluctuations; threshold voltage shift;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE Photonics Society, 2010 23rd Annual Meeting of the
  • Conference_Location
    Denver, CO
  • ISSN
    -
  • Print_ISBN
    978-1-4244-5368-9
  • Electronic_ISBN
    -
  • Type

    conf

  • DOI
    10.1109/PHOTONICS.2010.5698881
  • Filename
    5698881
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2303130