2.2-inch QQVGA AMOLED driven by low temperature top-gate a-IGZO TFT

Author

Lin, Chang-Yu ; Yeh, Yung-Hui ; Cheng, Chun-Cheng ; Lai, Chih-Ming ; Yu, Ming-Jiue ; Liu, Shou-En ; Ho, Geng-Tai ; Lin, Heng-Tien ; Wu, Chung-Chih

Author_Institution

Electron. & Optoelectron. Res. Labs. (EOL), Ind. Technol. Res. Inst., Hsinchu, Taiwan

fYear

2010

fDate

7-11 Nov. 2010

Firstpage

307

Lastpage

308

Abstract

We investigated amorphous In₂O₃-Ga₂O₃-ZnO (a-IGZO) oxide semiconductor material as the active layer of TFTs. The top gate a-IGZO TFTs by using a conventional photolithography technique have good performance without an additional post annealing process. A 2.2- inch QQVGA AMOLED display was demonstrated by using a-IGZO TFT fabricated on glass substrate. The maximum process temperature is 200°C.

Keywords

II-VI semiconductors; LED displays; amorphous semiconductors; annealing; gallium compounds; indium compounds; integrated optics; photolithography; thin film transistors; wide band gap semiconductors; zinc compounds; In₂O₃-Ga₂O₃-ZnO; QQVGA AMOLED; SiO₂; active layer; amorphous oxide semiconductor material; annealing process; conventional photolithography; glass substrate; low temperature top-gate a-IGZO TFT; process temperature; size 2.2 inch; temperature 200 degC;

fLanguage

English

Publisher

ieee

Conference_Titel

IEEE Photonics Society, 2010 23rd Annual Meeting of the

Conference_Location

Denver, CO

ISSN

-

Print_ISBN

978-1-4244-5368-9

Electronic_ISBN

-

Type

conf

DOI

10.1109/PHOTONICS.2010.5698882

Filename

5698882