DocumentCode :
2303149
Title :
2.2-inch QQVGA AMOLED driven by low temperature top-gate a-IGZO TFT
Author :
Lin, Chang-Yu ; Yeh, Yung-Hui ; Cheng, Chun-Cheng ; Lai, Chih-Ming ; Yu, Ming-Jiue ; Liu, Shou-En ; Ho, Geng-Tai ; Lin, Heng-Tien ; Wu, Chung-Chih
Author_Institution :
Electron. & Optoelectron. Res. Labs. (EOL), Ind. Technol. Res. Inst., Hsinchu, Taiwan
fYear :
2010
fDate :
7-11 Nov. 2010
Firstpage :
307
Lastpage :
308
Abstract :
We investigated amorphous In2O3-Ga2O3-ZnO (a-IGZO) oxide semiconductor material as the active layer of TFTs. The top gate a-IGZO TFTs by using a conventional photolithography technique have good performance without an additional post annealing process. A 2.2- inch QQVGA AMOLED display was demonstrated by using a-IGZO TFT fabricated on glass substrate. The maximum process temperature is 200°C.
Keywords :
II-VI semiconductors; LED displays; amorphous semiconductors; annealing; gallium compounds; indium compounds; integrated optics; photolithography; thin film transistors; wide band gap semiconductors; zinc compounds; In2O3-Ga2O3-ZnO; QQVGA AMOLED; SiO2; active layer; amorphous oxide semiconductor material; annealing process; conventional photolithography; glass substrate; low temperature top-gate a-IGZO TFT; process temperature; size 2.2 inch; temperature 200 degC;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
ISSN :
-
Print_ISBN :
978-1-4244-5368-9
Electronic_ISBN :
-
Type :
conf
DOI :
10.1109/PHOTONICS.2010.5698882
Filename :
5698882
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2303149
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