Title :
Investigating the environmental stability of Li-doped ZnO based thin film transistors by two dimensional numerical simulations
Author :
Gupta, Dipti ; Jang, Jongsu ; Nayak, P.K. ; Hong, Yongtaek
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul, South Korea
Abstract :
We investigate effect of Li-doping upon environmental stability of ZnO TFTs by two dimensional simulations. TFTs modelled with acceptor like tail states and deep donor Gaussian defects obtained a good agreement with the experimental data.
Keywords :
Gaussian processes; II-VI semiconductors; deep levels; environmental degradation; impurity states; lithium; semiconductor device models; semiconductor device reliability; semiconductor doping; semiconductor thin films; thin film transistors; wide band gap semiconductors; zinc compounds; TFT; ZnO:Li; deep donor Gaussian defects; doping effect; environmental stability; thin film transistors; two dimensional numerical simulation; Li-doped ZnO; Thin film transistor; device simulation; environment stability;
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-5368-9
DOI :
10.1109/PHOTONICS.2010.5698883
