Author :
Berry, G. ; Burns, Gabbie ; Charles, P. ; Crump, P. ; Davies, A. ; Ghin, R. ; Holm, M. ; Kompocholis, C. ; Taylor, Andrew ; Agresti, M. ; Bertone, D. ; Fang, R.Y. ; Gotta, P. ; Magnetti, G. ; Meneghini, G. ; Paoletti, Riccardo ; Rossi, Gustavo ; Valenti,
Abstract :
100°C, 10 Gb/s operation has been demonstrated using conventional InGaAsP technology and a ´robust´ design. The key results are:- excellent temperature performance, passing of the GbE scaled mask from RT to 90°C and transmission over 10 km of standard fibre without error floor.
Keywords :
III-V semiconductors; distributed feedback lasers; electro-optical modulation; gallium arsenide; gallium compounds; indium compounds; optical fibre LAN; semiconductor lasers; 10 Gbit/s; 10 km; 100 degC; 90 to 20 degC; Gb/s directly modulated InGaAsP DFB lasers; GbE scaled mask; InGaAsP technology; error floorless; standard fibre; temperature performance; uncooled Ethernet; Costs; Ethernet networks; Local area networks; Metropolitan area networks; Optical fiber LAN; Optical fiber communication; Optical fiber networks; Power lasers; Quantum well devices; Temperature;
