100°C, 10 Gb/s directly modulated InGaAsP DFB lasers for uncooled Ethernet applications

Author

Berry, G. ; Burns, Gabbie ; Charles, P. ; Crump, P. ; Davies, A. ; Ghin, R. ; Holm, M. ; Kompocholis, C. ; Taylor, Andrew ; Agresti, M. ; Bertone, D. ; Fang, R.Y. ; Gotta, P. ; Magnetti, G. ; Meneghini, G. ; Paoletti, Riccardo ; Rossi, Gustavo ; Valenti,

Author_Institution

ICO-Agilent Technol., Ipswich, UK

fYear

2002

fDate

17-22 Mar 2002

Firstpage

415

Lastpage

416

Abstract

100°C, 10 Gb/s operation has been demonstrated using conventional InGaAsP technology and a ´robust´ design. The key results are:- excellent temperature performance, passing of the GbE scaled mask from RT to 90°C and transmission over 10 km of standard fibre without error floor.

Keywords

III-V semiconductors; distributed feedback lasers; electro-optical modulation; gallium arsenide; gallium compounds; indium compounds; optical fibre LAN; semiconductor lasers; 10 Gbit/s; 10 km; 100 degC; 90 to 20 degC; Gb/s directly modulated InGaAsP DFB lasers; GbE scaled mask; InGaAsP technology; error floorless; standard fibre; temperature performance; uncooled Ethernet; Costs; Ethernet networks; Local area networks; Metropolitan area networks; Optical fiber LAN; Optical fiber communication; Optical fiber networks; Power lasers; Quantum well devices; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication Conference and Exhibit, 2002. OFC 2002

Print_ISBN

1-55752-701-6

Type

conf

DOI

10.1109/OFC.2002.1036453

Filename

1036453