Title :
4-channel×10-Gbit/s parallel laser-diode module for high-capacity optical interconnects
Author :
Shishikura, M. ; Nagatsuma, K. ; Ido, T. ; Tokuda, M. ; Nakahara, K. ; Nomoto, E. ; Sano, Hiroyasu
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
A 4-channel×10-Gbit/s parallel LD module for next-generation high-capacity optical interconnects was developed. To suppress the inter-channel crosstalk, a PPLC platform with a channel-pitch conversion function was also developed. Four un-cooled 1.3-μm InGaAlAs FP-LDs were mounted on separated electrodes of the PPLC platform by passive alignment; thus, the module is compact and low cost. Crosstalk is as low as -40 dB. The module has a total throughput of 40 Gbit/s over 300-m transmission without suffering any degradation caused by inter-channel crosstalk. Our proposed 4-channel×10 Gbit/s parallel LD module can be applied to next-generation high-capacity optical interconnects.
Keywords :
III-V semiconductors; electrodes; gallium arsenide; gallium compounds; indium compounds; modules; optical communication equipment; optical crosstalk; optical interconnections; semiconductor lasers; telecommunication channels; 1.3 micron; 10 Gbit/s; 300 m; 4-channel parallel LD module; 40 Gbit/s; Fabry Perot laser diodes; InGaAlAs; PPLC platform; channel pitch conversion function; compact low cost module; inter-channel crosstalk; inter-channel crosstalk suppression; next-generation high-capacity optical interconnects; parallel LD module; passive alignment; separated electrodes; total throughput; uncooled InGaAlAs FP-LDs; Bonding; Frequency; High speed optical techniques; Optical crosstalk; Optical fiber communication; Optical interconnections; Optical receivers; Optical transmitters; Silicon; Throughput;
Conference_Titel :
Optical Fiber Communication Conference and Exhibit, 2002. OFC 2002
Print_ISBN :
1-55752-701-6
DOI :
10.1109/OFC.2002.1036456
