Title :
Patterned InGaAs/InGaAsP/InP quantum dot active lasers using diblock copolymer lithography and selective area MOCVD growth
Author :
Mawst, L.J. ; Kuech, T.F.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Wisconsin - Madison, Madison, WI, USA
Abstract :
Diblock copolymer nanopatterning and selective growth is implemented for realizing quantum dot active region lasers on InP substrates. The quantum dot active region is found to be sensitive to the temperature ramping prior to the cladding layer regrowth.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; nanofabrication; nanolithography; nanopatterning; nanophotonics; quantum dot lasers; semiconductor growth; InGaAs-InGaAsP-InP; cladding layer regrowth; diblock copolymer lithography; diblock copolymer nanopatterning; patterned quantum dot active lasers; selective area MOCVD growth;
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-5368-9
DOI :
10.1109/PHOTONICS.2010.5698908
