Investigation of InxGa1−xAs FinFET architecture with varying indium (x) concentration and quantum confinement

Author

Arun, V. ; Agrawal, Nidhi ; Lavallee, Guy ; Cantoro, Mirco ; Sang-Su Kim ; Dong-Won Kim ; Datta, Soupayan

Author_Institution

Pennsylvania State Univ., University Park, PA, USA

fYear

2014

fDate

9-12 June 2014

Firstpage

1

Lastpage

2

Abstract

In_xGa_1-xAs FinFETs with varying indium percentage, x, and vertical body thicknesses, are fabricated in a closely packed fin configuration (10 fins per micron of layout area) and their relative performance analyzed and benchmarked. In_0.7Ga_0.3As quantum well FinFET (QWFF) exhibits peak field effect mobility of 3,000 cm²/V-sec at a fin width of 38nm with highest performance. Short channel In_0.7Ga_0.3As QWFF (L_g=120nm) exhibits I_DSAT of 1.16mA/μm at V_G-V_T=1V and extrinsic peak g_m=1.9mS/μm at V_DS=0.5V and I_OFF=30 nA/μm. Components of external resistance (R_Ext), side wall DIT, fin profile are analyzed to investigate feasibility of In_xGa_1-xAs FinFET for beyond 10nm technology node.

Keywords

III-V semiconductors; MOSFET; carrier mobility; gallium arsenide; indium compounds; quantum well devices; FinFET architecture; In_xGa_1-xAs; closely packed fin configuration; external resistance; field effect mobility; fin profile; quantum confinement; quantum well FinFET; short channel QWFF; size 120 nm; varying indium (x) concentration; varying indium percentage; vertical body thickness; voltage 0.5 V; FinFETs; Indium; Indium phosphide; Layout; Resistance; Silicon; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4799-3331-0

Type

conf

DOI

10.1109/VLSIT.2014.6894372

Filename

6894372