Title :
Reduced poly-Si TFT threshold voltage instability by high-temperature hydrogenation of a-Si-like spin centers
Author :
Kamigaki, Yoshiaki ; Hashimoto, Takashi ; Aoki, Masaaki ; Yokogawa, Kenetsu ; Moniwa, Masahiro ; Iijima, Sinpei ; Minami, Masataka ; Ishida, Hiroshi ; Okuhira, Hidekazu ; Aoki, Sigeru ; Yamanaka, Toshiaki
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
Abstract :
New findings of this work are as follows: a-Si-like spin centers (.Si/spl equiv/Si/sub 3/) are found to exist in CVD-SiO/sub 2/ gate dielectric films as well as poly-Si substrate films. High-temperature hydrogenation (HTH) at 850/spl deg/C is effective in terminating these spin centers and in reducing the poly-Si PMOS TFT threshold voltage instability.
Keywords :
annealing; dangling bonds; elemental semiconductors; semiconductor device reliability; silicon; thin film transistors; 850 C; CVD-SiO/sub 2/ gate dielectric films; Si-SiO/sub 2/; a-Si-like spin centers; high-temperature hydrogenation; poly-Si TFT; poly-Si substrate films; spin center termination; threshold voltage instability reduction; Annealing; Bonding; Dielectric films; Dielectric substrates; Dielectric thin films; Fabrication; Hydrogen; Stress; Thin film transistors; Threshold voltage;
Conference_Titel :
Reliability Physics Symposium, 1995. 33rd Annual Proceedings., IEEE International
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-7803-2031-X
DOI :
10.1109/RELPHY.1995.513646
