DocumentCode :
2303881
Title :
Defect structure of undoped and Pb-doped Bi2Se3 single crystals
Author :
Horák, J. ; Lost´ak, P. ; Navrátil, J. ; Karamazov, S.
Author_Institution :
Inst. of Inorg. Chem., Czechoslovak Acad. of Sci., Prague, Czech Republic
fYear :
1997
fDate :
26-29 Aug 1997
Firstpage :
68
Lastpage :
71
Abstract :
We present the results of studies of some transport coefficients and optical properties in the IR region of both undoped and Pb-doped Bi 2Se3 single crystals with the aim of explaining some anomalies in the dependence of the concentration of free current carriers on the content of incorporated Pb atoms
Keywords :
Fourier transform spectra; Hall effect; Seebeck effect; absorption coefficients; bismuth compounds; carrier density; infrared spectra; lead; semiconductor materials; vacancies (crystal); Bi2Se3:Pb; FTIR spectra; Hall constant; Pb-doped samples; Seebeck coefficient; absorption coefficient; defect structure; free carrier concentration; single crystals; undoped samples; vacancies; Atomic layer deposition; Bismuth; Chemistry; Crystalline materials; Crystals; Frequency; Magnetic field measurement; Plasma temperature; Solid state circuits; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on
Conference_Location :
Dresden
ISSN :
1094-2734
Print_ISBN :
0-7803-4057-4
Type :
conf
DOI :
10.1109/ICT.1997.666976
Filename :
666976
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2303881
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