• DocumentCode
    2303881
  • Title

    Defect structure of undoped and Pb-doped Bi2Se3 single crystals

  • Author

    Horák, J. ; Lost´ak, P. ; Navrátil, J. ; Karamazov, S.

  • Author_Institution
    Inst. of Inorg. Chem., Czechoslovak Acad. of Sci., Prague, Czech Republic
  • fYear
    1997
  • fDate
    26-29 Aug 1997
  • Firstpage
    68
  • Lastpage
    71
  • Abstract
    We present the results of studies of some transport coefficients and optical properties in the IR region of both undoped and Pb-doped Bi 2Se3 single crystals with the aim of explaining some anomalies in the dependence of the concentration of free current carriers on the content of incorporated Pb atoms
  • Keywords
    Fourier transform spectra; Hall effect; Seebeck effect; absorption coefficients; bismuth compounds; carrier density; infrared spectra; lead; semiconductor materials; vacancies (crystal); Bi2Se3:Pb; FTIR spectra; Hall constant; Pb-doped samples; Seebeck coefficient; absorption coefficient; defect structure; free carrier concentration; single crystals; undoped samples; vacancies; Atomic layer deposition; Bismuth; Chemistry; Crystalline materials; Crystals; Frequency; Magnetic field measurement; Plasma temperature; Solid state circuits; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on
  • Conference_Location
    Dresden
  • ISSN
    1094-2734
  • Print_ISBN
    0-7803-4057-4
  • Type

    conf

  • DOI
    10.1109/ICT.1997.666976
  • Filename
    666976
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2303881