Advanced RMG module to improve AC/DC performance for 14nm FinFETs and beyond

Author

Togo, Mitsuhiro ; Joshi, Madhura ; Meer, H.V. ; Liu, Yanbing ; Yong, C. ; Liu, B. ; He, Xiangning ; Wu, Xiaojie ; Mun, S.Y. ; Zhang, Xiaobing ; Konduparthi, D. ; Lian, Jie ; Bohra, G. ; Tong, W.H. ; Xiao, C.Y. ; Triyoso, D. ; Banghart, E. ; Pandey, Shesh

Author_Institution

GlobalFoundries, Malta, NY, USA

fYear

2014

fDate

9-12 June 2014

Firstpage

1

Lastpage

2

Abstract

An advanced Replacement Metal Gate (RMG) module was developed for 14nm node FinFETs and beyond. STI oxide extra recess increases on-current without any dedicated Source and Drain (SD) optimization. Tungsten (W) selective etch recesses work function metal (WFM), which reduces gate-contact capacitance, and improves AC performance and yields by increasing gate-contact space. Combination of work function (WF) adjust treatment and WFM optimization was applied to achieve wide range of threshold voltage (Vt) control for multiple Vt (multi-Vt) devices without any performance penalty.

Keywords

MOSFET; etching; optimisation; tungsten; voltage control; work function; AC-DC performance; FinFET; STI oxide; W; WFM optimization; advanced RMG module; advanced replacement metal gate module; gate-contact capacitance; gate-contact space; size 14 nm; threshold voltage control; tungsten selective etch recess; work function metal; Capacitance; Delays; FinFETs; Logic gates; Optimization; Performance evaluation; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4799-3331-0

Type

conf

DOI

10.1109/VLSIT.2014.6894392

Filename

6894392