• DocumentCode
    2304309
  • Title

    Improved RF power extraction from 1.55µm Ge/Si n-i-p photodiodes with load impedance optimization

  • Author

    Huard, Andrew L. ; Piels, Molly ; Ramaswamy, Anand ; Bowers, John E. ; Derickson, Dennis

  • Author_Institution
    EE Dept., California Polytech. Univ. San Luis Obispo, San Luis Obispo, CA, USA
  • fYear
    2010
  • fDate
    7-11 Nov. 2010
  • Firstpage
    431
  • Lastpage
    432
  • Abstract
    The RF output power of Ge/Si n-i-p waveguide photodetectors is improved by increasing the load impedance. The maximum extracted RF power at 3GHz is 17.13dBm with a compression current of 42mA using a 100Ω load.
  • Keywords
    Ge-Si alloys; integrated optoelectronics; microwave photonics; optical waveguides; p-i-n photodiodes; photodetectors; radiofrequency integrated circuits; semiconductor materials; Ge-Si; RF power extraction; current 42 mA; frequency 3 GHz; load impedance; load impedance optimization; photodiodes; resistance 100 ohm; waveguide photodetectors; wavelength 1.55 mum;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE Photonics Society, 2010 23rd Annual Meeting of the
  • Conference_Location
    Denver, CO
  • ISSN
    -
  • Print_ISBN
    978-1-4244-5368-9
  • Electronic_ISBN
    -
  • Type

    conf

  • DOI
    10.1109/PHOTONICS.2010.5698944
  • Filename
    5698944
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2304309