Thermally robust CMOS-aware Ge MOSFETs with high mobility at high-carrier densities on a single orientation Ge substrate

This paper presents the superior electron and hole mobility on a single orientation Ge substrate for compact and cost-effective CMOS applications. The different scattering mechanisms of electron and hole mobility are discussed for understanding carrier transport physics. On the basis of this understanding, the highest electron mobility of 437 cm²/Vs and hole mobility of 213 cm²/Vs at N_s=1e13 cm^-2 in sub-nm EOT Ge(111) FETs are demonstrated.