Reliability improvement in high aspect ratio contacts and vias filled with blanket tungsten CVD film

Author

Fukuda, Naoki ; Saito, Tatsuyuki ; Suzuki, Yukihiro ; Fujiwara, Tsuyoshi ; Yamaguchi, Hizuru ; Owada, Nobuo

Author_Institution

Device Dev. Center, Hitachi Ltd., Tokyo, Japan

fYear

1995

fDate

4-6 April 1995

Firstpage

30

Lastpage

35

Abstract

This paper reports a new open failure observed in high aspect ratio contacts and vias filled with blanket tungsten CVD film. This failure mode has been proved to be induced by the poor film quality of the sputtered glue layer at the bottom of a hole. Open failure in contacts has been suppressed by lowering the deposition temperature of the sputtered glue layer together with the optimization of CVD process conditions. Open failure in vias has been suppressed by collimation sputtering of the glue layer at low temperature.

Keywords

CVD coatings; failure analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; tungsten; CVD process conditions optimization; W; blanket W CVD film; collimation sputtering; deposition temperature; failure mode; film quality; high aspect ratio contacts; open failure; sputtered glue layer; vias; Aluminum; Collimators; Conductivity; Failure analysis; Metallization; Silicon; Sputtering; Substrates; Temperature; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1995. 33rd Annual Proceedings., IEEE International

Conference_Location

Las Vegas, NV

Print_ISBN

0-7803-2031-X

Type

conf

DOI

10.1109/RELPHY.1995.513649

Filename

513649