DocumentCode
2304402
Title
Effect of extrusion process on the thermoelectric properties of hot-extruded n-type Bi2Te2.85Se0.15 compounds
Author
Seo, J.H. ; Lee, D.M. ; Park, K. ; Lee, C.H.
Author_Institution
Dept. of Metall. Eng., Inha Univ., Inchon, South Korea
fYear
1997
fDate
26-29 Aug 1997
Firstpage
81
Lastpage
84
Abstract
The n-type Bi2Te2.85Se0.15 compounds were fabricated by the hot extrusion under in the temperature range of 300 to 440°C under an extrusion ratio of 20:1. The microstructure and thermoelectric properties of the compounds were studied. It was found that the compounds was highly dense. The density was increased with increasing temperature. Also, equiaxed fine grains (~1.0 μm) were formed because dynamic recrystallization occurred during the extrusion. The hot extrusion gave rise to a slightly preferred orientation of grains. The small grain size and preferred orientation of grains and the high density contributed to an improvement in the thermoelectric properties. The highest figure of merit (2.62×10-3/K) was obtained at 440°C. In addition, the Sbl3 dopants significantly increased the figure of merit. The values of the figure of merit for 0.05 wt% Sbl3-doped Bi 2Te0.85Se0.15 compounds hot extruded at 440°C was 3.05×10-3/K
Keywords
antimony compounds; bismuth compounds; density; extrusion; grain size; powder technology; recrystallisation; semiconductor materials; texture; thermoelectricity; 300 to 440 degC; Bi2Te2.85Se0.15-SbI3; density; dynamic recrystallization; equiaxed fine grains; figure of merit; grain size; hot extrusion; hot-extruded n-type compounds; microstructure; preferred orientation; thermoelectric properties; Bismuth; Conducting materials; Crystal microstructure; Grain boundaries; Powders; Tellurium; Temperature distribution; Thermal conductivity; Thermoelectricity; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on
Conference_Location
Dresden
ISSN
1094-2734
Print_ISBN
0-7803-4057-4
Type
conf
DOI
10.1109/ICT.1997.666979
Filename
666979
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