• DocumentCode
    2304402
  • Title

    Effect of extrusion process on the thermoelectric properties of hot-extruded n-type Bi2Te2.85Se0.15 compounds

  • Author

    Seo, J.H. ; Lee, D.M. ; Park, K. ; Lee, C.H.

  • Author_Institution
    Dept. of Metall. Eng., Inha Univ., Inchon, South Korea
  • fYear
    1997
  • fDate
    26-29 Aug 1997
  • Firstpage
    81
  • Lastpage
    84
  • Abstract
    The n-type Bi2Te2.85Se0.15 compounds were fabricated by the hot extrusion under in the temperature range of 300 to 440°C under an extrusion ratio of 20:1. The microstructure and thermoelectric properties of the compounds were studied. It was found that the compounds was highly dense. The density was increased with increasing temperature. Also, equiaxed fine grains (~1.0 μm) were formed because dynamic recrystallization occurred during the extrusion. The hot extrusion gave rise to a slightly preferred orientation of grains. The small grain size and preferred orientation of grains and the high density contributed to an improvement in the thermoelectric properties. The highest figure of merit (2.62×10-3/K) was obtained at 440°C. In addition, the Sbl3 dopants significantly increased the figure of merit. The values of the figure of merit for 0.05 wt% Sbl3-doped Bi 2Te0.85Se0.15 compounds hot extruded at 440°C was 3.05×10-3/K
  • Keywords
    antimony compounds; bismuth compounds; density; extrusion; grain size; powder technology; recrystallisation; semiconductor materials; texture; thermoelectricity; 300 to 440 degC; Bi2Te2.85Se0.15-SbI3; density; dynamic recrystallization; equiaxed fine grains; figure of merit; grain size; hot extrusion; hot-extruded n-type compounds; microstructure; preferred orientation; thermoelectric properties; Bismuth; Conducting materials; Crystal microstructure; Grain boundaries; Powders; Tellurium; Temperature distribution; Thermal conductivity; Thermoelectricity; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on
  • Conference_Location
    Dresden
  • ISSN
    1094-2734
  • Print_ISBN
    0-7803-4057-4
  • Type

    conf

  • DOI
    10.1109/ICT.1997.666979
  • Filename
    666979