Utilizing Sub-5 nm sidewall electrode technology for atomic-scale resistive memory fabrication

Author

Kai-Shin Li ; ChiaHua Ho ; Ming-Taou Lee ; Min-Cheng Chen ; Cho-Lun Hsu ; Lu, J.M. ; Lin, C.H. ; Chen, Choon Chowe ; Wu, B.W. ; Hou, Y.F. ; Lin, Colin Yu ; Chen, Y.J. ; Lai, T.Y. ; Li, M.Y. ; Yang, I. ; Wu, C.S. ; Fu-Liang Yang

Author_Institution

Nat. Nano Device Labs. (NDL), Nat. Appl. Res. Labs. (NARLabs), Hsinchu, Taiwan

fYear

2014

fDate

9-12 June 2014

Firstpage

1

Lastpage

2

Abstract

A sidewall electrode technology was successfully developed for the first time in this study, improving the understanding of the working mechanism in an ultra small, functional HfO₂-based resistive random access memory (RRAM) device (<; 1 × 3 nm²). This technology exhibits potential for application in atomic-scale memories. The 1 × 3 nm² RRAM device exhibited an excellent performance, featuring a high endurance of more than 10⁴ cycles, a large on/off verified window (>100), and reasonable reliability (stress time > 10³ s, 2 × 10⁴ h at 250 °C). Furthermore, the 1 × 3 nm² RRAM device exhibited distinctive unipolar behavior when a high voltage and rapid switching operation (7 V, 50 ns) were applied, and a switching mechanism model is proposed.

Keywords

electrodes; hafnium compounds; integrated circuit metallisation; nanoelectronics; random-access storage; three-dimensional integrated circuits; HfO₂; atomic scale resistive memory fabrication; rapid switching operation; resistive random access memory; sidewall electrode technology; size 1 nm; size 3 nm; switching mechanism model; unipolar behavior; voltage 7 V; Electrodes; Fabrication; Hafnium compounds; Switches; Thermal stability; Three-dimensional displays; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4799-3331-0

Type

conf

DOI

10.1109/VLSIT.2014.6894402

Filename

6894402