Tailoring switching and endurance / retention reliability characteristics of HfO2 / Hf RRAM with Ti, Al, Si dopants

Author

Chen, Y.Y. ; Roelofs, R. ; Redolfi, A. ; Degraeve, Robin ; Crotti, D. ; Fantini, Andrea ; Clima, S. ; Govoreanu, B. ; Komura, M. ; Goux, L. ; Zhang, Leiqi ; Belmonte, A. ; Xie, Qian ; Maes, Jochen ; Pourtois, G. ; Jurczak, Malgorzata

Author_Institution

imec, Leuven, Belgium

fYear

2014

fDate

9-12 June 2014

Firstpage

1

Lastpage

2

Abstract

We have demonstrated that by material engineering using different spices to dope HfO₂, RRAM cell switching and endurance / retention reliability characteristics can be modulated. The changes in SET/RESET voltages, endurance optimal programming window and retention result mainly from the oxygen scavenging efficiency of Hf cap in presence of different dopants in HfO₂. This impacts directly the formation of OEL that controls the RRAM switching characteristics and retention. By utilizing different dopant materials, the operation range of the HfO₂ based RRAM can be tailored to be compatible with different selectors and to be adopted for broader applications.

Keywords

aluminium; hafnium; hafnium compounds; random-access storage; semiconductor device reliability; semiconductor doping; silicon; titanium; Hf cap; HfO₂-Hf:Ti,Al,Si; OEL formation; RRAM cell switching; SET-RESET voltages; dopant materials; endurance-retention reliability; material engineering; optimal programming window; oxygen scavenging efficiency; tailoring switching; Doping; Hafnium oxide; Oxygen; Silicon; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4799-3331-0

Type

conf

DOI

10.1109/VLSIT.2014.6894403

Filename

6894403