DocumentCode
2304695
Title
Twinning superlattice in VLS grown planar GaAs nanowires induced by impurity doping
Author
Dowdy, Ryan ; Mohseni, Parsian ; Fortuna, Seth A. ; Wen, Jianguo ; Li, Xiuling
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
fYear
2012
fDate
23-27 Sept. 2012
Firstpage
693
Lastpage
694
Abstract
In situ doping with Zn and C impurities induces periodic twin plane boundaries along the axis of planar <;110>; GaAs nanowires grown via Au-catalyzed vapor-liquid-solid (VLS) mechanism in a MOCVD environment.
Keywords
III-V semiconductors; MOCVD; carbon; doping; gallium arsenide; gold; nanowires; twin boundaries; zinc; Au; C; GaAs; MOCVD environment; Zn; impurity doping; periodic twin plane boundaries; twinning superlattice; vapor liquid solid grown planar nanowires; Doping; Gallium arsenide; Gold; Impurities; Nanowires; Substrates; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2012 IEEE
Conference_Location
Burlingame, CA
Print_ISBN
978-1-4577-0731-5
Type
conf
DOI
10.1109/IPCon.2012.6358811
Filename
6358811
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